Wide-Band Gap Nitrides by Atomic Layer Deposition (ALD)

Centrum Partners:

• Karin Larsson, Anna Pallas, Daniel Petrini, Ilia Katardjiev, Sture Hogmark (Uppsala)
• Hans Högberg and Martina Lattemann (Linköping)

External Partners:

• Levente Vitos (Uppsala University)
• Hermann Sachdev (Germany)
• Sergiu Nistor (Rumania)

Scientific Objectives

• Develop a fundamental knowledge concerning the atomic level growth of various wide band gap nitrides (pure phases or as nano-composites).
• Develop a chemical route towards the formation of low frictional surfaces of N-containing materials.
• Get a deeper knowledge about the role and influence of B in various chemical environments-important for the development of novel materials (e.g., AlBxN).

Technology Transfer Objectives

• Add one company partner to the project
• A European (c-)BN network is at present “under construction”, which will be directly coupled to MS2E.

Research plan:

Four interrelated subprojects involve i) growth of single phase nitrides, ii) growth of composite materials including interfacial design, iii) development of low-frictional nitride surfaces, and iv) materials property variations by incorporation of elements (e.g. B) in low concentrations. These efforts are truly interdisciplinary in merging together competences from various disciplines (chemistry, physics and engineering sciences), as well as specific competences in synthesis, theory, characterization and testing/development

Cubic BN is an example of a wide band gap material with excellent and promising materials properties. The effect of substrate types (e.g., MeB2) on phase stabilization has been found to be decisive for the cubic growth of BN, and a theoretical investigation of these effects has recently been initiated in the present group. It will be followed by chemical route considerations coupled closely to both ordinary CVD and more high-energetic vapor growth methods. The possibility to improve these properties by using surface termination, functionalization, and dopants will be investigated.

It has in various material types been observed that B inclusion can largely affect materials properties like dielectric constants (e.g., within AlN) and toughness (e.g., within WC//Co interfaces). The effect of B will be investigated for these types of compounds and will also be related to the growth problems with c-BN, as well as in phase formations in MeB2.