Wide-Band Gap Nitrides by Magnetron Sputter Epitaxy (MSE)
Centrum Partners:
Lars Hultman, Hans Högberg, Per Persson and Igor Abrikosov (Linköping)
Ilia Katardjiev, Sören Berg, and Karin Larsson (Uppsala)
External Partners:
Bo Monemar and Vanya Daracheva (Linköping University)
Scientific Objectives
To synthesize and explore new electronic grade wide-band gap materials following our track-record of fabricating state-of-the-art epilayers of such hard semiconductors
Theoretical studies by ab initio calculations.
Technology Transfer Objectives
The nature of this project is exploratory and is part of the Centers sustained effort in identifying, synthesizing and characterizing new functional materials with unique prop-erties for various applications. Thus, initially we propose to study both theoretically and experimentally wurtzite ABN films. Existing literature data on this class of materials suggests that they have very promising properties.
Of particular interest is their structure, texture and materials constants in view of elec-troacoustic and electronic applications. Provided the films exhibit properties superior to those of existing materials the project will go on to developing electroacoustic devices and applications.
Show compatibility of MSE- AlN and AlInN as template layers for further GaN deposi-tion by MOCVD or HTCVD.
Investigate interdisciplinary (theory/experimental) the effect of chemical com-position on dielectric constant.
Research Plan
Synthesize first GaN film by developing a MSE processes for reactive sputtering of Ga.
A deposition process for wurtzite AlxB1-xN (ABN) films will be developed and initial studies of their properties initiated. For this purpose, a PVD system will be refurbished and equipped with necessary magnetrons at Uppsala.
Collaborate with theory groups on understanding the band gap and lattice pa-rameters of ternary alloy nitrides, including the phenomenon of lattice parame-ters differing from a Vegard’s rule behavior
