Publications

2013   2012   2011   2010   2009   2008   2007   2006   2005   2004   2003   2002   2001    

2013

• Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)
  C. Xia, S. Watcharinyanon, A.A. Zakharov, L.I. Johansson, R. Yakimova, C. Virojanadara, Surf. Sci. (2013)
  http://dx.doi.org/10.1016/j.susc.2013.03.011
• Na Induced Changes in the Electronic Band Structure of Graphene Grown on C-Face SiC
  L. I. Johansson, C. Xia, C. Virojanadara, Graphene, 2, 1-7 (2013)
• Is the registry between adjacent graphene layers grown on C-face SiC different compared to that on Si-face SiC
  L. I. Johansson, C. Xia, J. Hassan, T. Iakimov, A. A. Zakharov, S. Watcharinyanon, R. Yakimova, E. Janzen, C. Virojanadara, Crystal, in press (2013)
• Ytterbium Intercalation of Epitaxial Graphene Grown on Si-face SiC
  S. Watcharinyanon, L. I. Johansson, C. Xia, J. I. Flege, A. Meyer, J. Falta, C. Virojanadara, Graphene , inpress (2013)
• Ytterbium oxide formation at the graphene-SiC interface studied by photoemission
  S. Watcharinyanon, L. I. Johansson, C. Xia, and C. Virojanadara, J. Vac. Sci. Technol. A. 31, 020606 (2013) 

 2012

• The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
  J. Eriksson, R. Pearce, T. Iakimov, C. Virojanadara, D. Gogova, M. Andersson, M. Syväjärvi, A. L. Spetz, R. Yakimova, Appl. Phys. Lett. 100, 241607 (2012) 
• Changes in structural and electronic properties of graphene grown on 6H-SiC(0001) induced by Na
  S. Watcharinyanon, L. I. Johansson, C. Xia, and C. Virojanadara, J. Appl. Phys. 111, 083711 (2012)
• Penetration of alkali atoms throughout graphene membrane: theoretical modeling
  D. W. Boukhvalov and C. Virojanadara, Nanoscale, 4, 1749 (2012)
• Si intercalation/deintercalation of graphene on 6H-SiC(0001)
  C. Xia, S. Watcharinyanon, A. A. Zakharov, R. Yakimova, L. Hultman, L. I. Johansson, and C. Virojanadara, Phys. Rev. B. 85, 045418 (2012)
• Studies of Li intercalation of hydrogenated graphene on SiC(0001)
  S. Watcharinyanon, L. I. Johansson, A. A. Zakharov C. Virojanadara, Surf. Sci. 606, 401 (2012)
• The Registry of Graphene Layers Grown on SiC(000-1)
  L. I. Johansson, S. Watcharinyanon, A. A. Zakharov, R. Yakimova, C. Virojanadara, Materials Science Forum Vols. 717 - 720, 613 (2012)
• Studies of Li Intercalation into Epitaxial Graphene on SiC(0001)
  C. Virojanadara, S. Watcharinyanon, A. A. Zakharov, R. Yakimova, L. I. Johansson, Materials Science Forum Vols. 717 - 720, 653 (2012)
• Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
  J. Hassan, C. Virojanadara, A. Meyer, I. G. Ivanov, J. I. Flege, S. Watcharinyanon, J. Falta, L. I. Johansson, E. Janzén, Materials Science Forum Vols. 717 - 720, 605 (2012)

2011

• The Stacking of adjacent graphene layers grown on C-face SiC
  L. I. Johansson, S. Watcharinyanon, A. A. Zakharov, T. Iakimov, R. Yakimova and C. Virojanadara, Phys. Rev. B. 84, 125405 (2011)
• Rb and Cs deposition on epitaxial graphene grown on 6H-SiC(0001)
  S. Watcharinyanon, C. Virojanadara, L. I. Johansson, Surf. Sci. 605, 1918 (2011)
• Nano-scale 3D(E,kx,ky) band structure imaging on graphene and intercalated graphene
  A. A. Zakharov, C. Virojanadara, S. Watcharinyanon, R. Yakimova, and L. I. Johansson, IBM J. Res. Dev. 55(4), 6 (2011)   
• Hydrogen intercalation of graphene grown on 6H-SiC(0001)
  S. Watcharinyanon, C. Virojanadara, J. R. Osiecki, A. A. Zakharov, R. Yakimova, R. I. G. Uhrberg and L. I. Johansson, Surf. Sci 605, 1662 (2011) 
• Surface and interface reactions for Ti layers deposited on the SiC(0001)-√3x√3R30° surface  
  L. I. Johansson and C. Virojanadara, Phys. Status. Solidi B 248, 667 (2011)

2010

• Large homogeneous mono-/Bi-layer graphene on 6H-SiC(0001) and buffer layer elimination
  C. Virojanadara, R. Yakimova, A. A. Zakharov and L. I. Johansson, J. Phys. D: Appl. Phys. 43,374010 (2010)
• Epitaxial graphene on 6H-SiC and Li intercalation
  C. Virojanadara, S. Watcharinyanon, A. A. Zakharov and L. I. Johansson, Phys. Rev. B. 82, 205402 (2010)
• A LEEM and XPEEM study of Li intercalated into graphene on SiC(0001)
  C. Virojanadara, A. A. Zakharov, S. Watcharinyanon, R. Yakimova and L. I. Johansson, New J. Phys. 12, 125015(2010)  
• Buffer layer free large area bi-layer graphene on SiC(0001)
  C. Virojanadara, A. A. Zakharov, R. Yakimova, and L. I. Johansson, Surf. Sci. 604 L4 (2010)
• Analysis of the formation conditions for large area epitaxial graphene on SiC substrates
  R. Yakimova, C. Virojanadara, D. Gogova , M. Syväjärvi, D. Siche, K. Larsson, L. I. Johansson, Mater. Sci. Forum. 645, 565 (2010)

2009

• Substrate Orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)
  C. Virojanadara, R. Yakimova, J. R. Osiecki, M. Syväjärvi, R. I. G. Uhrberg, L. I. Johansson, A. A. Zakharov, Surf. Sci. Lett. L87-L90 (2009)

2008

• Homogeneous large-area graphene layer growth on 6H-SiC(0001)
  C. Virojanadara, M. Syväjärvi,, R. Yakimova, L. I. Johansson, A. A. Zakharov, T. Balasubramanian, Phys. Rev. B 78, 245403 (2008)
• Electronic and atomic structure of the c(2x2) 4H-SiC(1-102)surface
  C. Virojanadara, M. Hetzel, L. I. Johansson, W. J. Choyke and U. Starke; Surf. Sci. 602, 525-533 (2008)
• A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC(1-102) surface
  C. Virojanadara, M. Hetzel and U. Starke; Appl. Phys. Lett., 92, 061902 (2008)
• Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC(1-102): The (2x1) reconstruction
  C. Virojanadara, M. Hetzel, C. Riedl, L. I. Johansson, W. J. Choyke, and U. Starke; Surface Science, 602, 3506 (2008)
• Atomic and electronic structure of the (2×1) and c(2×2) 4H-SiC(1-102) surfaces
  C. Virojanadara, M. Hetzel, L. I. Johansson, W. J. Choyke and U. Starke, Mat. Sci. Forum, 600-603, 291 (2008).

2007

• Ultrathin ZrO₂ films on Si-rich SiC(001)-(3x3): Growth and thermal stability
  P. G. Karlsson, L. I. Johansson, J. H. Richter, C. Virojanadara, J. Blomquist, P. Uvdal and A. Sandell; Surf. Sci. 601, 2390 (2007)
• Surface structure and composition of the mission-row reconstruction of VC0.8(110) :LEED, Grazing incidence X-ray and photoemission analysis
  Y. Gauthier, I. Zasada, M. De Santis, V. Langlais, C. Virojanadara, L. I. Johansson ; Surf. Sci. 601, 3383 (2007)
• Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
  C. Coletti, C.L. Frewin, S.E. Saddow, M. Hetzel, C. Virojanadara and U. Starke, Appl. Phys. Lett. 91, 061914 (2007)
• Self-organized one-dimensional nanostructures by metal-organic surface complexation
  T. Classen, M. Lingenfelder, Y. Wang, R. Chopra, C. Virojanadara, U. Starke, G. Constantini, K. Kern, G. Fratesi, S. Fabris, S. Gironcoli, S. Baroni, S. Hag and R. Raval; J. Phys. Chem. A 111, 12589-12603 (2007)
• Toward mechanical switching of surface-grafted [2] catenane by in-situ copper complexation
  D. Payer, S. Rauschenbach, M. Konuma, C.Virojanadara, U. Starke, C. Dietrich, J.-P. Collin, J.-P. Sauvage, N. Lin and K. Kern, J. Amer. Chem. Soc. 129, 15662-15667 (2007)
• Nanowire reconstruction on the 4H-SiC(1-102) surface
  M. Hetzel, C. Virojanadara and U. starke, Mat. Sci: Forum, Vol. 556-557, p 529-532 (2007)

2006

• Electronic Structure study of reconstructed Au-SiC(0001) surfaces
  C. Virojanadara and L. I. Johansson; Surf. Sci. 600, 436, (2006)
• Photoemission studies of thin-film Ti3SiC2 and nc-TiC/a-SiC nanocomposite
  P. Eklund, C. Virojanadara, J. Emmerlich, H. Högberg, L. Hultman, and L. I. Johansson; Phys. Rev. B 74, 045417 (2006)
• Surface Morphology and Structure of Hydrogen Etched 3C-SiC(001) on Si(001).
  C. Coletti, M. Hetzel, C. Virojanadara, U. Starke and S. E. Saddow, Mater. Res. Soc. Symp. Proc. 911 (2006)
• Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations
  S. Soubatch, W. Y. Lee, M. Hetzel, C. Virojanadara, C. Coletti, S. E. Saddow and U. Starke; Mater. Res. Soc. Symp. Proc. 911 (2006)

2005

• Photoemission study of Si-rich 4H-SiC surfaces and initial SiO₂/SiC interface formation
  C. Virojanadara and L. I. Johansson; Phys. Rev. B 71, 195335 (2005)
• Core level photoelectron spectroscopy studies of a √7x√7 R 19° reconstructed Au/4H-SiC (000-1) surface
  C. Virojanadara and L. I. Johansson; Surf. Sci. 585,163, (2005)
• Surface and interface studies of Si-rich 4H-SiC and SiO₂.
  C. Virojanadara and L. I. Johansson, Materials Science Forum 483-485, 581 (2005)

2004

• Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2 interface using photoemission and synchrotron radiation.
  C. Virojanadara and L. I. Johansson; Topical review article in J. Phys. Condensed matter, 16, S1783 (2004)
• A comparative photoemission study of polar and nonpolar SiC surfaces oxidized in N₂O.
  L. I. Johansson, C. Virojanadara, Th. Eickhoff, and W. Drube; Surf. Sci. 552, 251 (2004)
• Studies of NO on 4H-SiC (0001) using Synchrotron Radiation.
  C. Virojanadara and L. I. Johansson, J. Phys.: Condens. Matter 16, S3435-S3439 (2004)
• Synchrotron radiation studies of the SiO₂/SiC(0001) interface.
  L. I. Johansson and C. Virojanadara, J. Phys.: Condens. Matter 16, S3423- S3434 (2004)
• Oxidation studies of Non-Polar 4H-SiC.
  C. Virojanadara and L. I. Johansson, Materials Science Forum 1321-1324 (2004)
• A Photoemission Study of Polar and Non-polar SiC Surfaces Oxidized in N₂O
  L. I. Johansson, C. Virojanadara, Th. Eickhoff, and W. Drube, Materials Science Forum 1329-1332 (2004)

2003

• Effects of Niotrogenmonoxide on 4H-SiC (0001).
  C. Virojanadara and L. I. Johansson; Surf. Sci. 530, 17 (2003)
• Properties of the SiO₂/SiC interface investigated by angle resolved studies of the Si 2p and Si 1s levels and the Si KLL Auger transitions.
  L. I. Johansson, C. Virojanadara, Th. Eickhoff, and W. Drube; Surf. Sci.529, 515 (2003).
• Photoemission study of clean and oxidized nonpolar 4H-SiC surfaces.
  C. Virojanadara and L. I. Johansson; Phys. Rev. B 68, 125314 (2003)
• Angle resolved studies of SiO₂/SiC samples
  L. I. Johansson, C. Virojanadara, Th. Eickhoff, and W. Drube,Materials Science Forum 433-436, 539 (2003)

2002

• Oxidation studies of 4H-SiC(0001) and (000-1).
  C. Virojanadara and L. I. Johansson; Surf. Sci 505, 358 (2002).
• Molecular oxygen adsorption on SiC(0001)-√3 x √3 R 30°.
  C. Virojanadara and L. I. Johansson; Surf. Sci. Lett. 519, 73 (2002).
• Schottky barrier height studies of Au-SiC(0001) using photoemission and synchrotron radiation.
  C. Virojanadara, P. -A. Glans, T. Balasubramanian, L. I. Johansson, E. B. Macak, Q. Wahab, and L. D. Madsen; J. Electron. Mater. 31(2002).
• The surface band structure of Li/Be(-1010).
  L. I. Johansson, T. Balasubramanianand, and C. Virojanadara; Surf. Rev. and Lett. 9, 1493 (2002).
• Changes induced in the surface electronic structure of Be(0001) after Si adsorption.
  L.I. Johansson, C. Virojanadara, and T. Balasubramanian; Surf. Rev. Lett. 9, 687 (2002).
• Impact of the initial surface conditions on the defect appearance in 4H-SiC epilayers.
  R. Yakimova, H. Jacobson, M. Syväjarvi, A. Kakanakova-Georgieva, T. Iakimov, C. Virojanadara, L. I. Johansson, and E. Janzén; Materials Science Forum 389-393, 283 (2002).
• Adsorption of Metastable Molecular Oxygen on SiC(0001)- √3x√3
  C. Virojanadara and L. I. Johansson; Materials Science Forum 389-393, 697 (2002).
• Oxidation States Present on SiC (0001) after Oxygen Exposures
  C. Virojanadara and L. I. Johansson; Materials Science Forum 389-393, 701 (2002).

2001

• High energy photoemission investigations of SiO₂/SiC samples
  C. Virojanadara, P. -A. Glans, L. I. Johansson, Eickhoff Th, and W. Drube; Appl. Surf. Sci. 172, 253 (2001).
• Interfacial investigation of in situ oxidation of 4H-SiC.
  C. Virojanadara and L. I. Johansson; Surf. Sci. Lett. 472, L145 (2001).
• Surface Electronic Band Structure and A Surface State Lifetimes at the Be(1010) Surface : Experiment and Theory.
  T. Balasubramanian, L. I. Johansson, P. -A. Glans, C. Virojanadara, V. M. Silkin, E. V.Chulkov, and P. M. Echenique; Phys. Rev. B 64, 205401 (2001).
• Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC.
  R. Yakimova, T. Iakimov, A. Kakanakova-Georgieva, M. Syväjärvi, H. Jacobson, C. Virojanadara, L. I. Johansson, and E. Janzén; Proc. of the 43rd Electronic Material Conference (Notre Dame, Indiana, USA; June 27 - 29, (2001).

PS. command "Shift+return" make the new line go straight after bullet